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US Patent Issued to Micron Technology on Aug. 25 for "Integrated memory comprising secondary access devices between digit lines and primary access devices" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,721, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated memory comprising secondary access devices betwe... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,722, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Fabricating semiconductor device" was invent... Read More


US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Memory device including capacitor contacts having different materials and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,723, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device including capacitor contacts havin... Read More


US Patent Issued to Fujian Jinhua Integrated Circuit on Aug. 25 for "Semiconductor device and fabricating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,724, issued on Aug. 25, was assigned to Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou City, China). "Semiconductor device and fabrica... Read More


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,725, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices having vertical transistors an... Read More


US Patent Issued to Intel on Aug. 25 for "Memory structure for low temperature operation" (Oregon, Washington, California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,726, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.). "Memory structure for low temperature operation" was invented by... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Integrated circuit devices and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,727, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit devices and methods of ma... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor devices including conductive filling pattern" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,728, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices including conductive f... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,729, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Do Keu... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Integrated circuit device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,730, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device" was invented b... Read More